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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT90LS4433-4AI датащи(PDF) 89 Page - ATMEL Corporation |
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AT90LS4433-4AI датащи(HTML) 89 Page - ATMEL Corporation |
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89 / 126 page  89 AT90S/LS4433 1042H–AVR–04/03 G: Write Data High Byte 1. Set BS to “1”. This selects high data. 2. Give WR a negative pulse. This starts programming of the data byte. RDY/BSY goes low. 3. Wait until RDY/BSY goes high to program the next byte. (See Figure 64 for signal waveforms.) The loaded command and address are retained in the device during programming. For efficient programming, the following should be considered: • The command needs to be loaded only once when writing or reading multiple memory locations. • Address High Byte needs to be loaded only before programming a new 256-word page in the Flash. • Skip writing the data value $FF, that is, the contents of the entire Flash and EEPROM after a Chip Erase. These considerations also apply to EEPROM programming and Flash, EEPROM and signature bytes reading. Figure 63. Programming the Flash Waveforms $10 ADDR. HIGH ADDR. LOW DATA LOW DATA XA1 XA0 BS XTAL1 WR RDY/BSY RESET OE 12V |
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