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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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A3P030 датащи(PDF) 42 Page - Microsemi Corporation |
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A3P030 датащи(HTML) 42 Page - Microsemi Corporation |
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42 / 220 page  ProASIC3 DC and Switching Characteristics 2-28 Revision 13 Table 2-32 • I/O Short Currents IOSH/IOSL Applicable to Advanced I/O Banks Drive Strength IOSL (mA)1 IOSH (mA)1 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 27 25 4 mA 27 25 6 mA 54 51 8 mA 54 51 12 mA 109 103 16 mA 127 132 24 mA 181 268 3.3 V LVCMOS Wide Range2 100 µA Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS 2.5 V LVCMOS 2 mA 18 16 4 mA 18 16 6 mA 37 32 8 mA 37 32 12 mA 74 65 16 mA 87 83 24 mA 124 169 1.8 V LVCMOS 2 mA 11 9 4 mA 22 17 6 mA 44 35 8 mA 51 45 12 mA 74 91 16 mA 74 91 1.5 V LVCMOS 2 mA 16 13 4 mA 33 25 6 mA 39 32 8 mA 55 66 12 mA 55 66 3.3 V PCI/PCI-X Per PCI/PCI-X specification 109 103 Notes: 1. TJ = 100°C 2. Applicable to 3.3 V LVCMOS Wide Range. IOSL/IOSH dependent on the I/O buffer drive strength selected for wide range applications. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification. |
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