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A3P030 датащи(PDF) 40 Page - Microsemi Corporation |
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A3P030 датащи(HTML) 40 Page - Microsemi Corporation |
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40 / 220 page ![]() ProASIC3 DC and Switching Characteristics 2-26 Revision 13 Table 2-29 • I/O Output Buffer Maximum Resistances 1 Applicable to Standard Plus I/O Banks Standard Drive Strength RPULL-DOWN ()2 RPULL-UP ()3 3.3 V LVTTL / 3.3 V LVCMOS 2 mA 100 300 4 mA 100 300 6 mA 50 150 8 mA 50 150 12 mA 25 75 16 mA 25 75 3.3 V LVCMOS Wide Range4 100 µA Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS 2.5 V LVCMOS 2 mA 100 200 4 mA 100 200 6 mA 50 100 8 mA 50 100 12 mA 25 50 1.8 V LVCMOS 2 mA 200 225 4 mA 100 112 6 mA 50 56 8 mA 50 56 1.5 V LVCMOS 2 mA 200 224 4 mA 100 112 3.3 V PCI/PCI-X Per PCI/PCI-X specification 25 75 Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec 4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD-8B specification. |
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