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AGLP030 датащи(PDF) 82 Page - Microsemi Corporation |
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AGLP030 датащи(HTML) 82 Page - Microsemi Corporation |
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82 / 134 page ![]() IGLOO PLUS DC and Switching Characteristics 2-68 Revision 16 Timing Characteristics 1.5 V DC Core Voltage Table 2-92 • RAM4K9 Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V Parameter Description Std. Units tAS Address setup time 0.69 ns tAH Address hold time 0.13 ns tENS REN, WEN setup time 0.68 ns tENH REN, WEN hold time 0.13 ns tBKS BLK setup time 1.37 ns tBKH BLK hold time 0.13 ns tDS Input data (DIN) setup time 0.59 ns tDH Input data (DIN) hold time 0.30 ns tCKQ1 Clock High to new data valid on DOUT (output retained, WMODE = 0) 2.94 ns Clock High to new data valid on DOUT (flow-through, WMODE = 1) 2.55 ns tCKQ2 Clock High to new data valid on DOUT (pipelined) 1.51 ns tC2CWWL1 Address collision clk-to-clk delay for reliable write after write on same address – applicable to closing edge 0.29 ns tC2CRWH1 Address collision clk-to-clk delay for reliable read access after write on same address – applicable to opening edge 0.24 ns tC2CWRH1 Address collision clk-to-clk delay for reliable write access after read on same address – applicable to opening edge 0.40 ns tRSTBQ RESET Low to data out Low on DOUT (flow-through) 1.72 ns RESET Low to data out Low on DOUT (pipelined) 1.72 ns tREMRSTB RESET removal 0.51 ns tRECRSTB RESET recovery 2.68 ns tMPWRSTB RESET minimum pulse width 0.68 ns tCYC Clock cycle time 6.24 ns FMAX Maximum frequency 160 MHz Notes: 1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash- Based cSoCs and FPGAs. 2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values. |
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