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AGLP030 датащи(PDF) 48 Page - Microsemi Corporation |
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AGLP030 датащи(HTML) 48 Page - Microsemi Corporation |
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48 / 134 page ![]() IGLOO PLUS DC and Switching Characteristics 2-34 Revision 16 1.8 V LVCMOS Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general- purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer. Table 2-52 • Minimum and Maximum DC Input and Output Levels 1.8 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1 IIH2 Drive Strength Min., V Max., V Min., V Max., V Max., V Min., V mA mA Max., mA3 Max., mA3 µA4 µA4 2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 2 2 9 11 10 10 4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4 17 22 10 10 6 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 6 6 35 44 10 10 8 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 8 8 35 44 10 10 Notes: 1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL. 2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is larger when operating outside recommended ranges. 3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 4. Currents are measured at 85°C junction temperature. 5. Software default selection highlighted in gray. Figure 2-9 • AC Loading Table 2-53 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) Input High (V) Measuring Point* (V) CLOAD (pF) 01.8 0.9 5 Note: *Measuring point = Vtrip. See Table 2-23 on page 2-21 for a complete table of trip points. Test Point Test Point Enable Path Datapath 5 pF R = 1 k R to VCCI for tLZ / tZL / tZLS R to GND for tHZ / tZH / tZHS 5 pF for tZH / tZHS / tZL / tZLS 5 pF for tHZ / tLZ |
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