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PIC32MX795F512LT-80I/PF датащи(PDF) 191 Page - Microchip Technology |
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PIC32MX795F512LT-80I/PF датащи(HTML) 191 Page - Microchip Technology |
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191 / 256 page ![]() © 2009-2011 Microchip Technology Inc. DS61156G-page 191 PIC32MX5XX/6XX/7XX TABLE 31-11: DC CHARACTERISTICS: PROGRAM MEMORY(3) DC CHARACTERISTICS Standard Operating Conditions: 2.3V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤TA ≤+85°C for Industrial -40°C ≤TA ≤+105°C for V-Temp Param. No. Symbol Characteristics Min. Typical(1) Max. Units Conditions Program Flash Memory D130 EP Cell Endurance 1000 — — E/W — D130a EP Cell Endurance 20,000 — — E/W See Note 4 D131 VPR VDD for Read 2.3 — 3.6 V — D132 VPEW VDD for Erase or Write 3.0 — 3.6 V — D132a VPEW VDD for Erase or Write 2.3 — 3.6 V See Note 4 D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications are violated D135 IDDP Supply Current during Programming —10 — mA — TWW Word Write Cycle Time 20 — 40 μs— D136 TRW Row Write Cycle Time(2) (128 words per row) 34.5 — ms — D137 TPE Page Erase Cycle Time 20 — — ms — TCE Chip Erase Cycle Time 80 — — ms — Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated. 2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus loads are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The default Arbitration mode is mode 1 (CPU has lowest priority). 3: Refer to “PIC32 Flash Programming Specification” (DS61145) for operating conditions during programming and erase cycles. 4: This parameter applies to PIC32MX534/564/664/764 devices only. This information is preliminary. |
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