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PIC32MX795F512LT-80I/PF датащи(PDF) 185 Page - Microchip Technology

номер детали PIC32MX795F512LT-80I/PF
подробное описание детали  High-Performance, USB, CAN and Ethernet 32-bit Flash Microcontrollers
PDF  256 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC32MX795F512LT-80I/PF датащи(HTML) 185 Page - Microchip Technology

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© 2009-2011 Microchip Technology Inc.
DS61156G-page 185
PIC32MX5XX/6XX/7XX
TABLE 31-5:
DC CHARACTERISTICS: OPERATING CURRENT (IDD)
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature
-40°C
≤TA ≤+85°C for Industrial
-40°C
≤TA ≤+105°C for V-Temp
Param.
No.
Typical(3)
Max.
Units
Conditions
Operating Current (IDD)(1,2) for PIC32MX575/675/695/775 Family Devices
DC20
6
9
mA
Code executing from Flash
-40ºC,
+25ºC,
+85ºC
—4 MHz
DC20b
7
10
+105ºC
DC20a
4
Code executing from SRAM
DC21
37
40
mA
Code executing from Flash
——
25 MHz
(Note 4)
DC21a
25
Code executing from SRAM
DC22
64
70
mA
Code executing from Flash
——
60 MHz
(Note 4)
DC22a
61
Code executing from SRAM
DC23
85
98
mA
Code executing from Flash
-40ºC,
+25ºC,
+85ºC
—80 MHz
DC23b
90
120
+105ºC
DC23a
85
Code executing from SRAM
DC25a
125
150
µA
+25°C
3.3V
LPRC (31 kHz)
(Note 4)
Operating Current (IDD)(1,2,5) for PIC32MX534/564/664/764 Family Devices
DC20b
6
9
mA
Code executing from Flash
4 MHz
DC20c
2
mA
Code executing from SRAM
DC21b
19
40
mA
Code executing from Flash
25 MHz
(Note 4)
DC21c
14
mA
Code executing from SRAM
DC22b
31
70
mA
Code executing from Flash
60 MHz
(Note 4)
DC22c
29
mA
Code executing from SRAM
DC23b
39
98
mA
Code executing from Flash
80 MHz
DC23c
39
mA
Code executing from SRAM
DC25b
100
150
µA
+25°C
3.3V
LPRC (31 kHz)
(Note 4)
Note 1:
A device’s IDD supply current is mainly a function of the operating voltage and frequency. Other factors,
such as PBCLK (Peripheral Bus Clock) frequency, number of peripheral modules enabled, internal code
execution pattern, execution from Program Flash memory vs. SRAM, I/O pin loading and switching rate,
oscillator type, as well as temperature, can have an impact on the current consumption.
2:
The test conditions for IDD measurements are as follows: Oscillator mode = EC+PLL with OSC1 driven by
external square wave from rail-to-rail and PBCLK divisor = 1:8. CPU, Program Flash and SRAM data
memory are operational, program Flash memory Wait states = 7, program cache and prefetch are dis-
abled and SRAM data memory Wait states = 1. All peripheral modules are disabled (ON bit = 0). WDT
and FSCM are disabled. All I/O pins are configured as inputs and pulled to VSS. MCLR = VDD.
3:
Data in “Typical” column is at 3.3V, 25°C at specified operating frequency unless otherwise stated.
Parameters are for design guidance only and are not tested.
4:
This parameter is characterized, but not tested in manufacturing.
5:
This information is preliminary.



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