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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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13892 датащи(PDF) 15 Page - Freescale Semiconductor, Inc |
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13892 датащи(HTML) 15 Page - Freescale Semiconductor, Inc |
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15 / 161 page  Analog Integrated Circuit Device Data Freescale Semiconductor 15 13892 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS SWBST (CONTINUED) Maximum Continuous Load Current ILMAX 3.0 V < VIN < 4.65, VOUT = 5.0 V IBST 300 - - mA Peak Current Limit At SWBSTIN; VIN = 3.6 V BSTPK 800 - 1500 mA Start-up Overshoot IL = 0 mA VBSTOS - - 500 mV Efficiency, IL = ILMAX SWBSTEFF - 80 - % Bias Current Consumption IBSTBIAS - 390 1200 µA External Components - Used as a condition for all other parameters Inductor(22) Inductor Resistance Inductor saturation current at 30% loss in inductance value Bypass Capacitor(23) Bypass Capacitor ESR at resonance Input Capacitor Diode current capability Diode current capability LBST R_WBST ILSAT COBST ESRBST CBSTD IBSTDPK IBSTDPK -20% - 1.0 -60% 1.0 1.0 850 1500 2.2 - - 10 - 4.7 - - +20% 0.2 - +35% 10 - - - µH W A µF m Ω µF mAdc mApk NMOS Off Leakage, SWBSTIN = 4.5 V, SWBSTEN = 0 IBSTIK - 1.0 5.0 µA VVIDEO Operating Input Voltage Range VINMIN to VINMAX VINVIDEO VNOM+0.25 - 4.65 V Operating Current Load Range ILMIN to ILMAX (Not exceeding PNP max power) IVIDEO 0 -- 350 mA Minimum Bypass Capacitor Value Used as a condition for all other parameters COVIDEO 1.1 2.2 - µF Bypass Capacitor ESR 10 kHz -1.0 MHz ESRVIDEO 20 - 100 m Ω VVIDEO ACTIVE MODE DC Output Voltage VOUT Vinmin < VIN < VINMAX, ILMIN < IL < ILMAX ΔVVIDEO VNOM – 3% VNOM VNOM + 3% V Load Regulation 1.0 mA < IL < ILMAX, For any VINMIN < VIN < VINMAX VVIDEOLOPP - - 0.20 mV/mA Line Regulation VINMIN < VIN < VINMAX, For any ILMIN < IL < ILMAX VVIDEOLIPP - 5.0 8.0 mV Short-circuit Protection Threshold VINMIN < VIN < VINMAX, Short-circuit VOUT to GND IVIDEOSHT ILMAX+20% - - mA Active Mode Quiescent Current VINMIN < VIN < VINMAX, IL = 0 IVIDEOQS - 30 45 µA Notes 22. Preferred device TDK VLS252012 series at 2.5x2.0 mm footprint and 1.2 mm max height 23. Applications of SWBST should take into account impact of tolerance and voltage derating on the bypass capacitor at the output level. Table 5. Static Electrical Characteristics Characteristics noted under conditions -30 °C ≤ TA ≤ 85 °C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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