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PROASIC3E датащи(PDF) 19 Page - Actel Corporation

номер детали PROASIC3E
подробное описание детали  I/O Structures in IGLOOe and ProASIC3E Devices
PDF  37 Pages
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производитель  ACTEL [Actel Corporation]
домашняя страница  http://www.actel.com
Logo ACTEL - Actel Corporation

PROASIC3E датащи(HTML) 19 Page - Actel Corporation

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I/O Structures in IGLOOe and Pro ASIC3E Devices
v1.4
19
This current draw can occur in the following cases:
In Active and Static modes:
Input buffers with pull-up, driven LOW
Input buffers with pull-down, driven HIGH
Bidirectional buffers with pull-up, driven LOW
Bidirectional buffers with pull-down, driven HIGH
Output buffers with pull-up, driven LOW
Output buffers with pull-down, driven HIGH
Tristate buffers with pull-up, driven LOW
Tristate buffers with pull-down, driven HIGH
In Flash*Freeze mode:
Input buffers with pull-up, driven LOW
Input buffers with pull-down, driven HIGH
Bidirectional buffers with pull-up, driven LOW
Bidirectional buffers with pull-down, driven HIGH
Electrostatic Discharge Protection
Low-power flash devices are tested per JEDEC Standard JESD22-A114-B.
These devices contain clamp diodes at every I/O, global, and power pad. Clamp diodes protect all
device pads against damage from ESD as well as from excessive voltage transients.
All IGLOO and ProASIC3 devices are tested to the following models: the Human Body Model (HBM)
with a tolerance of 2,000 V, the Machine Model (MM) with a tolerance of 250 V, and the Charged
Device Model (CDM) with a tolerance of 200 V.
Each I/O has two clamp diodes. One diode has its positive (P) side connected to the pad and its
negative (N) side connected to VCCI. The second diode has its P side connected to GND and its N side
connected to the pad. During operation, these diodes are normally biased in the off state, except
when transient voltage is significantly above VCCI or below GND levels.
In 30 k gate devices, the first diode is always off. In other devices, the clamp diode is always on and
cannot be switched off.
By selecting the appropriate I/O configuration, the diode is turned on or off. Refer to Table 13 for
more information about the I/O standards and the clamp diode.
The second diode is always connected to the pad, regardless of the I/O configuration selected.
Table 13 • I/O Hot-Swap and 5 V Input Tolerance Capabilities in IGLOOe and ProASIC3E Devices
I/O Assignment
Clamp Diode
Hot Insertion
5 V Input
Tolerance
Input
Buffer
Output
Buffer
3.3 V LVTTL/LVCMOS
No
Yes
Yes1
Enabled/Disabled
3.3 V PCI, 3.3 V PCI-X
Yes
No
Yes1
Enabled/Disabled
LVCMOS 2.5 V 2
No
Yes
No
Enabled/Disabled
LVCMOS 2.5 V / 5.0 V 2
Yes
No
Yes3
Enabled/Disabled
LVCMOS 1.8 V
No
Yes
No
Enabled/Disabled
LVCMOS 1.5 V
No
Yes
No
Enabled/Disabled
Voltage-Referenced Input Buffer
No
Yes
No
Enabled/Disabled
Differential, LVDS/B-LVDS/M-LVDS/LVPECL
No
Yes
No
Enabled/Disabled
Notes:
1. Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor.
2. In the SmartGen Core Reference Guide, select the LVCMOS5 macro for the LVCMOS 2.5 V / 5.0 V I/O
standard or the LVCMOS25 macro for the LVCMOS 2.5 V I/O standard.
3. Can be implemented with an external resistor and an internal clamp diode.



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