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STM32H533CE датащи(PDF) 183 Page - STMicroelectronics

номер детали STM32H533CE
подробное описание детали  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H533CE датащи(HTML) 183 Page - STMicroelectronics

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DS14539 Rev 1
183/231
STM32H533xx
Electrical characteristics
200
5.3.27
Temperature and VBAT monitoring
5.3.28
Voltage booster for analog switch
Table 99. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-4 x 26
-
kΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
1. Specified by design - Not tested in production.
Error on Q
-10
-
+10
%
tS_vbat(1)
ADC sampling time when reading VBAT input
9
-
-
µs
VBAThigh
High supply monitoring
3.50
3.575
3.63
V
VBATlow
Low supply monitoring
-
1.36
-
IVBATbuf
Sensor buffer consumption
-
3.8
6.5
µA
Table 100. VBAT charging characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
RBC
Battery charging resistor
VBRS in PWR_CR3 = 0
-
5
-
kΩ
VBRS in PWR_CR3 = 1
-
1.5
-
Table 101. Temperature monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TEMPhigh
High temperature monitoring
-
126
-
°C
TEMPlow
Low temperature monitoring
-
-37
-
Table 102. Voltage booster for analog switch characteristics(1)
Symbol
Parameter
Condition
Min
Typ
Max Unit
VDD
Supply voltage
-
1.71
2.6
3.6
V
tSU(BOOST) Booster startup time
-
-
-
50
µs
IDD(BOOST) Booster consumption
1.71 V ≤ VDD ≤ 2.7 V
-
-
125
µA
2.7 V < VDD < 3.6 V
-
-
250
1. Evaluated by characterization - Not tested in production.



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