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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32H533CE датащи(PDF) 141 Page - STMicroelectronics |
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STM32H533CE датащи(HTML) 141 Page - STMicroelectronics |
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141 / 231 page  DS14539 Rev 1 141/231 STM32H533xx Electrical characteristics 200 11 Fmax(2)(4) Maximum frequency C = 50 pF, 1.71 V ≤ VDD ≤ 2 V - 67 MHz C = 40 pF, 1.71 V ≤ VDD ≤ 2 V - 100 C = 30 pF, 1.71 V ≤ VDD ≤ 2 V - 120 C = 20 pF, 1.71 V ≤ VDD ≤ 2 V - 155 C = 10 pF, 1.71 V ≤ VDD ≤ 2 V - 200 tr/tf(3)(4) Output high to low level fall time and output low to high level rise time C = 50 pF, 1.71 V ≤ VDD ≤ 2 V - 5.0 ns C = 40 pF, 1.71 V ≤ VDD ≤ 2 V - 4.1 C = 30 pF, 1.71 V ≤ VDD ≤ 2 V - 3.3 C = 20 pF, 1.71 V ≤ VDD ≤ 2 V - 2.5 C = 10 pF, 1.71 V ≤ VDD ≤ 2 V - 1.8 1. Specified by design - Not tested in production. 2. The maximum frequency is defined with the conditions: (tr+tf) ≤ 2/3 T, Skew ≤ 1/20 T, 45% < Duty cycle < 55%. 3. The fall and rise times are defined, respectively, between 90 and 10% and between 10 and 90% of the output waveform. 4. Compensation system enabled. Table 63. Output timing characteristics (HSLV ON)(1) (continued) Speed Symbol Parameter Conditions Min Max Unit Table 64. Output timing characteristics VDDIO2 1.2 V range (HSLV OFF)(1) Speed Symbol Parameter Conditions Min Max Unit 00 Fmax(2) Maximum frequency C = 50 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 1 MHz C = 40 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 1 C = 30 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 1 C = 20 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 1 C = 10 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 1 tr/tf(3) Output high to low level fall time and output low to high level rise time C = 50 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 83.0 ns C = 40 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 79.0 C = 30 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 46.0 C = 20 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 72.0 C = 10 pF, 1.08 V ≤ VDDIO2 ≤ 1.32 V - 68.0 |
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