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M25PX32-VMP6F датащи(PDF) 55 Page - STMicroelectronics

номер детали M25PX32-VMP6F
подробное описание детали  32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface
PDF  63 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M25PX32-VMP6F датащи(HTML) 55 Page - STMicroelectronics

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M25PX32
DC and AC parameters
55/63
Figure 30.
Serial input timing
tW
Write Status Register cycle time
1.3
15
ms
tPP
(8)
Page Program cycle time (256 bytes)
0.8
5
ms
Page Program cycle time (n bytes)
int(n/8) × 0.025(9)
Program OTP cycle time (64 bytes)
0.2
ms
tSSE
Subsector Erase cycle time
70
150
ms
tSE
Sector Erase cycle time
1
3
s
tBE
Bulk Erase cycle time
34
80
s
Bulk Erase cycle time (VPP = VPPH)17
1.
Preliminary data.
2.
Typical values given for TA = 25° C.
3.
tCH + tCL must be greater than or equal to 1/ fC
4.
Value guaranteed by characterization, not 100% tested in production.
5.
Expressed as a slew-rate.
6.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7.
VPPH should be kept at a valid level until the program or erase operation has completed and its result
(success or failure) is known.
8.
When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1
≤ n ≤
256)
9.
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Table 17.
AC characteristics(1) (continued)
Test conditions specified in Table 13 and Table 14
Symbol
Alt.
Parameter
Min.
Typ.(2)
Max.
Unit
C
DQ0
AI13728
S
MSB IN
DQ1
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSH
tCHSL



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