at TA = 25 °C, VS = 3.3 V, ISENSE = 0 A, VCM = VIN– = VBUS= 12 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TEMPERATURE SENSOR

Measurement range

–40

+125

°C

Temperature accuracy

TJ = 25°C

+1.3

±2.5

°C

TJ= –40°C to +125°C

+1.5

±3

°C

INTEGRATED SHUNT

Internal kelvin resistance

TA = 25°C

2

mΩ

Pin to pin package resistance

IN+ to IN–, TA = 25°C

2.2

3.6

5

mΩ

Maximum shunt current(3)

TA = 25°C

±15

A

TA = 65°C

±10

A

Short time overload change

ISENSE = 20 A for 5 seconds

±0.02

%

Change due to temperature cycling

–55°C ≤ TJ ≤ 125°C, 700 cycles

±0.35

%

Resistance change to solder heat

260°C solder, 10 s

±0.03

%

Load life change

1000 hours, TJ = 125°C, ISENSE = 7A, 100%

loading

±0.7

%

High temperature exposure change

1000 hours, TA = 150°C, unbiased

±0.7

%

Cold temperature storage change

24 hours, TA = –65°C, unbiased

±0.2

%

POWER SUPPLY

VS

Supply voltage

2.7

5.5

V

IQ

Quiescent current

VSENSE = 0 V

640

700

µA

VSENSE = 0 V, TA = –40°C to +105°C

1.1

mA

IQSD

Quiescent current, shutdown

Shutdown mode

2.8

5

µA

TPOR

Device start-up time

Power-up (NPOR)

300

µs

From shutdown mode

60

DIGITAL INPUT / OUTPUT

VIH

Logic input level, high

SDA, SCL

1.2

5.5

V

VIL

Logic input level, low

GND

0.4

V

VOL

Logic output level, low

IOL = 3 mA

GND

0.4

V

IIO_LEAK

Digital leakage input current

0 ≤ VIN ≤ VS

–1

1

µA

(1)

Includes solder down and silicon lifetime shifts. Shifts in the shunt are not included; see the Load Life specification for shunt aging

shifts.

(2)

Subject to oscillator accuracy and drift

(3)

See Figure 7-3 for additional current limitations

INA700

SBOSAB4A – MAY 2023 – REVISED SEPTEMBER 2023

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