INA700 datasheet(5/50 Pages) TI

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6.5 Electrical Characteristics

at TA = 25 °C, VS = 3.3 V, ISENSE = 0 A, VCM = VIN– = VBUS= 12 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

CMRR

Common-mode rejection

–0.3 V < VCM < 40 V, TA = –40°C to +105°C

±1

±100

µA/V

Ios

Input offset current

TCT > 280 µs

±0.48

±1.5

dVos/dT Input offset current drift

TA = –40°C to +105°C

±50

±250

µA/°C

PSRR

Input offset current vs power supply

VS = 2.7 V to 5.5 V, TA = –40°C to +105°C

±0.05

±0.7

mA/V

Vos_bus

VBUS offset voltage

±6.2

±15

dVos/dT VBUS offset voltage drift

TA = –40°C to +105°C

±4

±40

µV/°C

PSRR

VBUS offset voltage vs power supply

VS = 2.7 V to 5.5 V

±1.1

mV/V

DC ACCURACY

GSERR

System current sense gain error (1)

ISENSE = 5 A, TA = 25°C

±0.1

±0.5

ISENSE = 10 A, TA = 25°C

±1.25

GS_DRFT System current sense gain error drift

–40°C ≤ TA ≤ 105°C

±15

±50 ppm/°C

GBERR

VBUS voltage gain error

VCM = 0 V to 40 V, TA = 25°C

±0.05

±0.2

GB_DRFT VBUS voltage gain error drift

–40°C ≤ TA ≤ 105°C

±30 ppm/°C

IBUS

VBUS leakage current

Device enabled with active conversions

µA

PTME

Power total measurement error (TME) TA = 25°C, VCM = 12V, ILOAD = 5A

±0.15

±0.85

ETME

Energy and charge TME

TA = 25°C, VCM = 12V, ILOAD = 5A

±0.25

±1.35

ADC resolution

Bits

1 LSB step size

Current

480

µA

Bus voltage

3.125

Temperature

125

m°C

Power

µW

Energy

1.536

Charge

µC

TCT

ADC conversion-time(2)

Conversion time field = 0h

µs

Conversion time field = 1h

Conversion time field = 2h

150

Conversion time field = 3h

280

Conversion time field = 4h

540

Conversion time field = 5h

1052

Conversion time field = 6h

2074

Conversion time field = 7h

4120

INL

Integral Non-Linearity

Internal ADC

±5

CLOCK SOURCE

FOSC

Internal oscillator frequency

MHz

OSCTOL Internal oscillator frequency tolerance

TA = 25°C

±0.07

±0.5

TA = –40°C to +105°C

±0.14

±1

www.ti.com

INA700

SBOSAB4A – MAY 2023 – REVISED SEPTEMBER 2023

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