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ZAMC4100 датащи(PDF) 105 Page - Renesas Technology Corp

номер детали ZAMC4100
подробное описание детали  Actuator and Motor Controller
PDF  156 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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ZAMC4100 датащи(HTML) 105 Page - Renesas Technology Corp

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ZAMC4100 Datasheet
© 2016 Integrated Device Technology, Inc.
105
January 26, 2016
4.2.1.
Accessing Invalid Memory Location
A default slave replies with an error response if unused parts of the memory space are accessed. For more
details, refer to the “AMBA 3 AHB-Lite Protocol Specification” section of the ARM® CORTEX™-M0 Document Kit.
4.2.2.
FLASH Memory
FLASH memory implements three regions (see Figure 4.1):
•
INFO
Contains READ-only parameter data set by manufacturing as well as memory protection
management.
•
BOOT
Optionally used by a bootloader. The size of this area is programmable.
•
PROG Program code memory, up to 32KB.
Each FLASH memory region is built with several pages of 512 bytes each. Each page is built with 4 rows and
each row contains of 32 words (1 word = 32 bits). One flash page is the smallest block that can be erased.
As the FLASH memory has some dedicated timings for the control signals when erasing (all or part of) the FLASH
and when writing data to the FLASH, a flash controller is used to support all mandatory operations (READ,
WRITE, ERASE) to be performed on the different locations and to guarantee the correct timings for write and
erase operations. Additionally, it is checked if the different operations are allowed to be performed depending on
the memory protection scheme.
Figure 4.1 Structure of FLASH Memory and Page Details
INFO
MAIN
0x07FFF
0x00000
0x0
32K
1K
PROG
1 Page = 512 Byte
Row-1
Row-2
Row-3
Row-4
1 ROW = 32 WORDS
1 WORD = 32Bits
0
31
1 WORD, ½ WORD and Byte Access
BOOT
0x00E00
progStart [0x07]



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