6.5 Electrical Characteristics (continued)

TJ = –40°C to +125°C. PVIN = 4 V to 16 V, VVCC = 4.5 V to 5.0 V (unless otherwise noted). Typical values are at TJ = 25°C,

PVIN = 12 V and VVCC = 4.5 V.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ILS(OCL)

Low-side valley overcurrent limit

(TPS548C26)

Valley current limit on LS FET, RILIM = 16.2

kΩ

23.4

26

28.6

A

ILS(OCL)

Low-side valley overcurrent limit

(TPS548C26)

Valley current limit on LS FET, RILIM = 21.5

kΩ

29.7

33

36.3

A

ILS(OCL)

Low-side valley overcurrent limit

(TPS548C26)

Valley current limit on LS FET, RILIM = 24.9

kΩ

35.1

39

42.9

A

ILS(NOC)

Low-side negative overcurrent limit

Sinking current limit on LS FET

–18

–16

–14

A

IZC

Zero-cross detection current threshold

ZC comparator threshold, enter DCM. PVIN

= 12 V, VVCC = 4.5 V

1200

mA

Response delay before entering Hiccup

16

20

µs

Hiccup sleep time before a restart

49

56

59

ms

OUTPUT OVP AND UVP

VOVF

VOUT Overvoltage-protection (OVP)

threshold

(VFB – VGOSNS) and rising

113.8%

118.8%

122.5%

OVF response delay

From OVF detection to the start of the NOC

operation

100

ns

VUVF

VOUT Undervoltage-protection (UVP)

threshold

(VFB – VGOSNS) and falling

70%

75%

80%

UVF response delay

From UVF detection to tri-state of the power

FETs

16

20

µs

TPS548C26

SLVSGM2 – MARCH 2023

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