6.5 Electrical Characteristics (continued)

TJ = –40°C to +125°C. PVIN = 4 V to 16 V, VVCC = 4.5 V to 5.0 V (unless otherwise noted). Typical values are at TJ = 25°C,

PVIN = 12 V and VVCC = 4.5 V.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tEN(DIG)

EN Deglitch Time

0.2

µs

EN internal pulldown resistor

VEN = 2 V, EN pin to AGND

110

125

140

kΩ

INTERNAL VCC LDO

VCC LDO output voltage

AVIN= 4 V, IVCC(load) = 5 mA

3.925

3.97

4.0

V

VCC LDO output voltage

AVIN= 5 V to 16 V, IVCC(load) = 5 mA

4.28

4.44

4.55

V

VCC LDO dropout voltage

AVIN – VVCC, AVIN = 4 V, IVCC(load) = 50 mA

160.8

280

mV

VCC_OK rising threshold

TJ = –40°C to 85°C. VCC rising, enabling

initial power-on including re-loading default

values from NVM

3.0

3.15

3.3

V

VCC_OK falling threshold

TJ = –40°C to 85°C. VCC falling, disabling

controller circuit including the memory and

the digital engine

2.95

3.10

3.25

V

VCC LDO short-circuit current limit

150

mA

REFERENCE VOLTAGE

VFB

FB voltage

TJ = 0°C to 85°C

792

800

804

mV

VFB

FB voltage

TJ = –40°C to 125°C

788

800

808

mV

IFB(LKG)

FB input leakage current

VFB = 800 mV

10

nA

SWITCHING FREQUENCY

fSW(FCCM)

Switching frequency, FCCM operation

TJ = –40°C to 125°C, PVIN = 12 V, VOUT =

1.1 V, no load, RMODE = 0 Ω

540

600

660

kHz

fSW(FCCM)

Switching frequency, FCCM operation

TJ = –40°C to 125°C, PVIN = 12 V, VOUT =

1.1 V, no load, RMODE = 1.5 kΩ

720

800

880

kHz

fSW(FCCM)

Switching frequency, FCCM operation

TJ = –40°C to 125°C, PVIN = 12 V, VOUT =

1.1 V, no load, RMODE = 14 kΩ

900

1000

1100

kHz

fSW(FCCM)

Switching frequency, FCCM operation

TJ = –40°C to 125°C, PVIN = 12 V, VOUT =

1.1 V, no load, RMODE = 16.2 kΩ

1080

1200

1320

kHz

fSW(FCCM)

Switching frequency, FCCM operation

TJ = –40°C to 125°C, PVIN = 12 V, VOUT =

1.1 V, no load, RMODE = float

720

800

880

kHz

STARTUP AND SHUTDOWN

tON(DLY)

Power on sequence delay

VVCC = 4.5 V

0.5

0.55

ms

tON(Rise)

Soft-start time

VVCC = 4.5 V, RSS = AGND

1.0

1.1

ms

tON(Rise)

Soft-start time

VVCC = 4.5 V, RSS = 5.76 kΩ

2.0

2.2

ms

tON(Rise)

Soft-start time

VVCC = 4.5 V, RSS = 14 kΩ

4.0

4.4

ms

tON(Rise)

Soft-start time

VVCC = 4.5 V, RSS = 28.7 kΩ

8.0

8.8

ms

tON(Rise)

Soft-start time

VVCC = 4.5 V, RSS = open

4.0

4.4

ms

POWER STAGE

RDSON(HS)

High-side MOSFET on-resistance

TJ = 25°C, PVIN = 12 V, VBOOT-SW = 4.5 V

4

mΩ

RDSON(HS)

High-side MOSFET on-resistance

TJ = 25°C, PVIN = 12 V, VBOOT-SW = 5.0 V

3.91

mΩ

RDSON(LS)

Low-side MOSFET on-resistance

TJ = 25°C, PVIN = 12 V, VVDRV = 4.5 V

1

mΩ

RDSON(LS)

Low-side MOSFET on-resistance

TJ = 25°C, PVIN = 12 V, VVDRV = 5 V

0.98

mΩ

tON(min)

Minimum ON pulse width

VVCC = 4.5 V

60

ns

tOFF(min)

Minimum OFF pulse width

VVCC = 4.5 V, IOUT = 1.5 A, VVOSNS =

VOUT_Setting – 20 mV, SW falling edge to

rising edge

210

250

ns

BOOT CIRCUIT

IBOOT(LKG)

BOOT leakage current

VEN = 2 V, VBOOT-SW = 5 V

150

µA

VBOOT-SW(UV_F)

BOOT-SW UVLO falling threshold

2.60

2.76

V

OVERCURRENT LIMIT

ILS(OCL)

Low-side valley overcurrent limit

(TPS548C26)

Valley current limit on LS FET, RILIM = 7.5

kΩ

10.2

12

13.8

A

ILS(OCL)

Low-side valley overcurrent limit

(TPS548C26)

Valley current limit on LS FET, RILIM = 12.1

kΩ

17.1

19

20.9

A

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TPS548C26

SLVSGM2 – MARCH 2023

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