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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L9960 датащи(PDF) 17 Page - STMicroelectronics |
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L9960 датащи(HTML) 17 Page - STMicroelectronics |
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17 / 95 page  DS11115 Rev 10 17/95 L9960, L9960T General electrical characteristics 94 3.5 Timing characteristics Table 8. Timing characteristics Symbol Parameter Condition Min. Typ. Max. Unit Tdon Delay time for switch-on Rload 6 Ω, ISR = 1; VSR = 1 PWM edge 10%, TSW_low_current = 0, Vout (or 10% Iout) - - 10.5 µs Rload 6 Ω, ISR = 0; VSR = 0 PWM edge 10%, TSW_low_current = 0, Vout (or 10% Iout) -- 11.5 µs NOSR mode: PWM edge 10%, TSW_low_current = 0, Vout (or 10% Iout) -- 7 µs Tdoff Delay time for switch-off Rload 6 Ω, ISR = 1; VSR = 1 PWM edge 90%, TSW_low_current = 0, Vout (or 90% Iout) -- 12 µs Rload 6 Ω, ISR = 0; VSR = 0 PWM edge 90%, TSW_low_current = 0, Vout (or 90% Iout) -- 13 µs NOSR mode PWM edge 90%, TSW_low_current = 0, Vout (or 90% Iout) -- 5.5 µs Td Delay time: symmetry |Tdon-Tdoff| NOSR mode - - 5 µs |Tdon-Tdoff| ISR/VSR mode 2 - 8 µs Trise_L Low-side transistor rise time Non selectable by SPI 10%-90% Vout , Iload = 3 A 0.04 - 0.5 µs Tfall_L Low-side transistor fall time 5 - 10 µs |
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