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S70FS01GS датащи(PDF) 97 Page - Cypress Semiconductor

номер детали S70FS01GS
подробное описание детали  1-Gbit (128 MByte), 1.8 V FS-S Flash
PDF  141 Pages
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производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S70FS01GS датащи(HTML) 97 Page - Cypress Semiconductor

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S70FS01GS
Document Number: 002-03833 Rev. *C
Page 97 of 141
This command is also supported in QPI mode. In Quad AIl mode the instruction is shifted in on IO0-IO3, two clock cycles per byte.
Figure 9.34
Page Program (PP 02h or 4PP 12h) QPI Mode Command Sequence
Note:
1. A = MSB of address = A23 for PP 02h, or A31 for 4PP 12h
9.6
Erase Flash Array Commands
9.6.1
Parameter 4KB-sector Erase (P4E 20h or 4P4E 21h)
The main Flash array address map may be configured to overlay 4KB parameter sectors over the lowest address portion of the
lowest address uniform sector (bottom parameter sectors) or over the highest address portion of the highest address uniform sector
(top parameter sectors). The main Flash array address map may also be configured to have only uniform size sectors. The
parameter sector configuration is controlled by the configuration bit CR3V[3]. The P4E and 4P4E commands are ignored when the
device is configured for uniform sectors only (CR3V[3]=1).
The Parameter 4 KB-sector Erase commands set all the bits of a 4 KByte parameter sector to 1 (all bytes are FFh). Before the P4E
or 4P4E command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device,
which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The instruction
20h [CR2V[7]=0] is followed by a 3-byte address (A23-A0), or
20h [CR2V[7]=1] is followed by a 4-byte address (A31-A0), or
21h is followed by a 4-byte address (A31-A0)
CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of the address has been latched in on SI. This
will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the chosen sector of the flash
memory array. If CS# is not driven high after the last bit of address, the sector erase operation will not be executed.
As soon as CS# is driven high, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read
the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a “1”.
when the erase cycle is in progress and a “0” when the erase cycle has been completed.
A P4E or 4P4E command applied to a sector that has been write protected through the Block Protection bits or ASP, will not be
executed and will set the E_ERR status. A P4E command applied to a sector that is larger than 4 KBytes will not be executed and
will not set the E_ERR status.
Figure 9.35
Parameter Sector Erase (P4E 20h or 4P4E 21h) Command Sequence
Note:
1. A = MSB of address = A23 for P4E 20h with CR2V[7]=0, or A31 for P4E 20h with CR2V[7]=1 or 4P4E 21h
CS#
SCLK
IO0
IO1
IO2
IO3
Phase
4
0
A-3
4
0
4
0
4
0
4
0
4
0
5
1
A-2
5
1
5
1
5
1
5
1
5
1
6
2
A-1
6
2
6
2
6
2
6
2
6
2
7
3
A
7
3
7
3
7
3
7
3
7
3
Instruct.
Address
Input D1
Input D2
Input D3
Input D4
CS#
SCK
SI
SO
Phase
7
6
5
4
3
2
1
0
A
1
0
Instruction
Address



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