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STM32F303C6 датащи(PDF) 51 Page - STMicroelectronics |
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STM32F303C6 датащи(HTML) 51 Page - STMicroelectronics |
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51 / 115 page ![]() DocID025083 Rev 5 51/115 STM32F303x6/x8 Electrical characteristics 100 6.3.4 Embedded reference voltage The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20. Table 23. Programmable voltage detector characteristics Symbol Parameter Conditions Min.(1) 1. Data based on characterization results only, not tested in production. Typ. Max.(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 Falling edge 2.09 2.18 2.27 VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 Falling edge 2.18 2.28 2.38 VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 Falling edge 2.28 2.38 2.48 VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 Falling edge 2.37 2.48 2.59 VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 Falling edge 2.47 2.58 2.69 VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 Falling edge 2.56 2.68 2.8 VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 Falling edge 2.66 2.78 2.9 VPVDhyst(2) 2. Guaranteed by design, not tested in production. PVD hysteresis - - 100 - mV IDD(PVD) PVD current consumption - - 0.15 0.26 µA Table 24. Embedded internal reference voltage Symbol Parameter Conditions Min. Typ. Max. Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.20 1.23 1.25 V TS_vrefint ADC sampling time when reading the internal reference voltage -2.2 - - µs VRERINT Internal reference voltage spread over the temperature range VDD = 31.8 V ±10 mV - - 10(1) 1. Guaranteed by design, not tested in production. mV TCoeff Temperature coefficient - - - 100(1) ppm/°C |
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