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STM32F303C6 датащи(PDF) 50 Page - STMicroelectronics

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STM32F303C6 датащи(HTML) 50 Page - STMicroelectronics

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Electrical characteristics
STM32F303x6/x8
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DocID025083 Rev 5
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 21 are derived from tests performed under the ambient
temperature condition summarized in Table 20.
6.3.3
Characteristics of the embedded reset and power-control block
The parameters given in Table 22 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 20.
Table 21. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min.
Max.
Unit
tVDD
VDD rise time rate
-
0
µs/V
VDD fall time rate
20
tVDDA
VDDA rise time rate
-
0
VDDA fall time rate
20
Table 22. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min.
Typ. Max. Unit
VPOR/PDR(1)
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
Power on/power down
reset threshold
Falling edge
1.8(2)
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
VPDRhyst(1) PDR hysteresis
-
-
40
-
mV
tRSTTEMPO(3)
3. Guaranteed by design, not tested in production.
POR reset
temporization
-
1.5
2.5
4.5
ms



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