STM32F303C6 datasheet(76/115 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F303x6/x8

76/115

DocID025083 Rev 5

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 18 and Figure 19 for standard I/Os.

Figure 18. TC and TTa I/O input characteristics - CMOS port

Ilkg

Input leakage

current (3)

TC, FT, TT, FTf and TTa

I/O in digital mode

VSS ≤VIN ≤VDD

±0.1

µA

TTa I/O in digital mode

VDD ≤VIN ≤VDDA

TTa I/O in analog mode

VSS ≤VIN ≤VDDA

±0.2

FT and FTf I/O(4)

VDD ≤VIN ≤5 V

RPU

Weak pull-up

equivalent resistor(5)

VIN = VSS

RPD

Weak pull-down

equivalent resistor(5)

VIN = VDD

CIO

I/O pin capacitance

1. Data based on design simulation.

2. Tested in production.

3. Leakage could be higher than the maximum value. If negative current is injected on adjacent pins. Refer to Table 51: I/O

current injection susceptibility.

4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimum (~10% order).

Table 52. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

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