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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F303C6 датащи(PDF) 68 Page - STMicroelectronics |
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STM32F303C6 датащи(HTML) 68 Page - STMicroelectronics |
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68 / 115 page  Electrical characteristics STM32F303x6/x8 68/115 DocID025083 Rev 5 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) Symbol Parameter Conditions(1) 1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. Min. (2) 2. Guaranteed by design, not tested in production. Typ. Max.( 2) Unit IDD LSE current consumption LSEDRV[1:0]=00 lower driving capability -0.5 0.9 µA LSEDRV[1:0]=10 medium low driving capability -- 1 LSEDRV[1:0]=01 medium high-driving capability -- 1.3 LSEDRV[1:0]=11 higher-driving capability -- 1.6 gm Oscillator transconductance LSEDRV[1:0]=00 lower-driving capability 5- - µA/V LSEDRV[1:0]=10 medium low-driving capability 8- - LSEDRV[1:0]=01 medium high-driving capability 15 - - LSEDRV[1:0]=11 higher-driving capability 25 - - tSU(LSE)(3) 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer. Startup time VDD is stabilized - 2 - s |
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