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ACT5880 датащи(PDF) 82 Page - Active-Semi, Inc |
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ACT5880 датащи(HTML) 82 Page - Active-Semi, Inc |
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82 / 87 page ![]() ACT5880 Rev 2, 03-Sep-13 - 82 - www.active-semi.com ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. Copyright © 2013 Active-Semi, Inc. Active-Semi Confidential―Do Not Copy or Distribute RB, are used to condition the string to have the desired ratios at the wanted hot threshold temperature and cold threshold temperature. Figure 18: The Battery Thermal Condition Circuit. The normal temperature range cells typically work in -20°C to 40°C while the extended range is -20°C to 60°C. Giving the a NTC thermistor with 25°C characteristic resistance of R25, the resistance ratio at hot threshold temperature is rH and at cold threshold temperature is rC, the proportion factor A and B for having the 2 precise ratios 0.748 and 0.349 are found as: A=0.411·(rC−rH) B=0.220·rC−1.22·rH It is necessary to verify how much power is desired to bias the selected NTC thermister, to assure no excessive self heating generated. The resistance ratio r is the ratio of the resistance at a temperature to the resistance at 25°C. This ratio is found from the NTC specification in a table or a curve plot. Reverse Block The ACT5880 has a reverse block circuit in the charge path. Whenever the VCHGIN is less than VVBAT, as low as to 0V, the reverse block circuit prevents the reverse leakage from VBAT to CHGIN and the state machine jumps into Sleep State. This reverse block circuit does not work in LDO mode operation. Input Over Voltage The CHGIN allows applying continuous 12V and momentary 14V on it. When the voltage applied on CHGIN is greater than the over voltage threshold, the state machine jumps into Sleep State and charging stops. As in the real application circuitry often has other connection to the CHGIN, such as the VBUS of USB circuit, the pull-up of charge state LED, the pull-up for BATID input, the pull-up for ACIN input and the pull-up for TH input. It may not be allowed to apply higher voltage on the CHGIN considering those other connections. Typical Application Consideration The charger circuit is well compensated, can be used to charge various capacities cells without modifying the input and output decoupling caps, which is 6.8μF~22μF for the input and 4.7μ~10μF for the output. Autonomic and Slave Charge The charge state machine in the ACT5880 is a complete autonomy. It senses the condition parameters, manages charge profile and indicates charge status without any foreign involvement. The charger wakes up the host system, and calls for host system involvement if it is configured so. With this mechanism, the ACT5880 could work as a slave charger with host system involvement on demand. Li+ Poly Cell and Li+ Cell Charge The scheme and the default setting are optimized for single cell Li+ poly charging. Li+ poly cells with 4.2V charge termination voltage, which are the most common battery types in phone designs. In case of using 18650 cylindrical cell, which is typically with 4.1V charge termination voltage (the termination voltage is anode material dependent, is specified for a battery model), applying 4.2V on it does not cause instant damage. It is possible to start with 4.2V battery regulation voltage and then program it to 4.1V later, but this is not rational for safe charging. Contact factory for ordering parts with 4.1V default. NiMH cells charge Though the charge scheme is not optimized for charging NiMH cells, its current limit and voltage limit, auto-restart features make the ACT5880 charger a practically applicable charger in fix wireless terminal applications for 3 NiMH cells charging with its 4.2V to 4.4V battery regulation voltages. In this kind of applications, the cells are floating charged at 1.4V to 1.47V per cell, which is in the good range for floating and uses the most part of the battery capability. Figure 19 shows the typical curves for NiMH battery. RB =B·R25 NTC =r·R25 RA =A·R25 0.748 0.349 TH CHGIN ACT5880 GA (Ground ) Battery Assembly |
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