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ACT5880 датащи(PDF) 59 Page - Active-Semi, Inc |
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ACT5880 датащи(HTML) 59 Page - Active-Semi, Inc |
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59 / 87 page ![]() ACT5880 Rev 2, 03-Sep-13 - 59 - www.active-semi.com ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. Copyright © 2013 Active-Semi, Inc. Active-Semi Confidential―Do Not Copy or Distribute 0 100 200 0 1000 2000 3000 4000 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 123456 0 1 2 3 4 5 012 34 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 (TA = 25°C, unless otherwise specified.) TYPICAL PERFORMANCE CHARACTERISTICS CONT’D 23. The Charge Current vs. VVBAT, VCHGIN=6V 24. The Charge Current vs. Ambient Temperature, VCHGIN=6V Ambient Temperature (°C) CH1: VVBAT, AC coupled, 100mV/div CH2: Load Current, 200mA/div TIME: 200μs/div 25. Charger Load Transition Response, LDO Mode 26. Backup Battery Charge Current vs. VVSYS CH1 27. The DC Sweep Histogram DNL 28. The DC Input Effective Numbers of Bits VVBAT CH2 0 40 ACIN/CHGLEV=1/1 ACIN/CHGLEV=0/1 ACIN/CHGLEV=0/0 1 0 ISET for 0.45A Max ISET for 0.3A Max ISET for 0.09A Max ISET for 1.0A Max ISET for 0.85A Max 80 VVSYS CODE (Decimal) CODE (LSB) |
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