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ACT5880 датащи(PDF) 53 Page - Active-Semi, Inc |
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ACT5880 датащи(HTML) 53 Page - Active-Semi, Inc |
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53 / 87 page ![]() ACT5880 Rev 2, 03-Sep-13 - 53 - www.active-semi.com ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. Copyright © 2013 Active-Semi, Inc. Active-Semi Confidential―Do Not Copy or Distribute REAL TIME CLOCK ELECTRICAL CHARACTERISTICS (VVBAT = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Minimum Sustainable Supply Crystal type: MC-146;TXC 9H03200010; AB38T. 1.2 V Oscillation Starting Supply 1.4 Maximum Supply Voltage 3.6 Maintaining Operation Current No alarm enabled. 5 µA Shutdown Current Disabled. 100 nA CLK32K Output Duty Test with 5kΩ pull-up to 1.8V. 10 90 % CLK32K Cycle to Cycle Jitter Falling edge to falling edge, evaluated for 100ms. ns OC Output Low 10mA sinking. 0.3 Maximum OC Pull-up Voltage 5.5 OC Pin Capacitance OC output off, the board and stripe parasitic removed. 2 pF V PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Current Adjustment Weight ISCALE_[1:0]=00 0.4 mA/bit ISCALE_[1:0]=01 0.8 ISCALE_[1:0]=10 1.2 ISCALE_[1:0]=11 1.6 Output Current Range Programmable by setting ISET_[5:0]=000000 to 111111 0 100.8 mA Absolute Current Error ISCALE_[1:0] = 01, ISET_[5:0] = 100000 for 25.6mA. Sinks from 1V source -2.5 2.5 Chanel to Chanel Mismatch 0.5 2.5 Load Regulation ODO1, ODO2 and ODO3, current change for sinking from 1V to sinking from 2.5V; ODO1 also from 2V to from 5V. 0.2 0.3 0.2 0.3 Output Low Voltage Feed in with 5mA from external source. 0.35 V Leakage Current ODO1, sinking from 40V source. 5 µA ODO2, ODO3, sinking from 5.5V source. 1 Internal PWM Frequency 244 Hz PWM Duty Adjustment Linear adjustment option, non-linear adjustment option. 0 100 Chanel to Chanel Delay BUFFER[ ]=1 (if set 0, the delay is 1/4 of the PWM cycle). 1 ms Current-On Slew Rate ODO2, ODO3 40 mA/µs ODO1 15 Over-eating TemperatureNOTE 135 °C Operation Current ISET_[5:0]=000001 27 µA Shutdown Current ISET_[5:0]=000000 1 mA OPEN-DRAIN DRIVER ELECTRICAL CHARACTERISTICS (VVBAT = 3.6V, TA = 25°C, unless otherwise specified.) Note: Guaranteed by design verification, characterization and production process control. |
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