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JS28F128P30TF75A датащи(PDF) 28 Page - Micron Technology

номер детали JS28F128P30TF75A
подробное описание детали  Numonyx Axcell P30-65nm Flash Memory
PDF  90 Pages
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производитель  MICRON [Micron Technology]
домашняя страница  http://www.micron.com
Logo MICRON - Micron Technology

JS28F128P30TF75A датащи(HTML) 28 Page - Micron Technology

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P30-65nm SBC
Datasheet
Apr 2010
28
Order Number: 208033-02
To read data from the device, the Read Array command must be issued. Read Array,
Read Status Register, Read Device Identifier, Read CFI, and Program Resume are valid
commands during a program suspend.
During a program suspend, deasserting CE# places the device in standby, reducing
active current. VPP must remain at its programming level, and WP# must remain
unchanged while in program suspend. If RST# is asserted, the device is reset.
8.5
Program Resume
The Resume command instructs the device to continue programming, and
automatically clears Status Register bits SR[7,2]. This command can be written to any
address. If error bits are set, the Status Register should be cleared before issuing the
next instruction. RST# must remain deasserted (see Figure 33, “Program Suspend/
Resume Flowchart” on page 74).
8.6
Program Protection
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If
VPP is at or below VPPLK, programming operations halt and SR.3 is set indicating a VPP-
level error. Block Lock Registers are not affected by the voltage level on VPP; they may
still be programmed and read, even if VPP is less than VPPLK.
Figure 8: Example VPP Supply Connections
• Factory Programming with
V
PP = VPPH
• Complete write/Erase Protection when
V
PP ≤ VPPLK
VCC
VPP
VCC
VPP
• Low Voltage and Factory Programming
• Low-voltage Programming only
• Logic Control of Device Protection
VCC
VPP
• Low Voltage Programming Only
• Full Device Protection Unavailable
VCC
VPP
≤ 10K Ω
V
PP
V
CC
V
CC
PROT #
V
CC
V
PP=VPPH
V
CC



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