JS28F128P30TF75A datasheet(1/90 Pages) MICRON

номер детали	JS28F128P30TF75A

подробное описание детали	Numonyx Axcell P30-65nm Flash Memory

PDF	90 Pages

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производитель	MICRON [Micron Technology]

домашняя страница	http://www.micron.com

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Datasheet

Apr 2010

1

Order Number: 208033-02

Numonyx® Axcell™ P30-65nm Flash Memory

128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Datasheet

Product Features

High Performance:

— 65ns initial access time for Easy BGA and

QUAD+

— 75ns initial access time for TSOP

— 25ns 8-word asynchronous-page read mode

— 52MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16- and continuous-word options for

burst mode

— 1.8V Low Power buffered programming at

1.8MByte/s (Typ) using 256-word buffer

— Buffered Enhanced Factory Programming at

3.2MByte/s (typ) using 256-word buffer

Architecture:

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 128-KByte array blocks

— Blank Check to verify an erased block

Voltage and Power:

— VCC (core) voltage: 1.7V – 2.0V

— VCCQ (I/O) voltage: 1.7V – 3.6V

— Standby current: 30µA(Typ)/55µA(Max)

— Continuous synchronous read current: 23mA

(Typ)/28mA (Max) at 52MHz

Enhanced Security:

— Absolute write protection: VPP = Vss

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

— One-Time Programmable Register:

— 64 OTP bits, programmed with unique

information by Numonyx

— 2112 OTP bits, available for customer

programming

Software:

— 20µs (Typ) program suspend

— 20µs (Typ) erase suspend

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Common Flash Interface capable

Density and Packaging:

— 56-Lead TSOP (128-Mbit, 64-Mbit)

— 64-Ball Easy BGA (128-Mbit, 64-Mbit)

— 88-Ball QUAD+ Package (128-Mbit)

— 16-bit wide data bus

Quality and Reliability:

— JESD47E Compliant

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles

— 65nm process technology

Аналогичный номер детали - JS28F128P30TF75A

производитель	номер детали	датащи	подробное описание детали
Intel Corporation	JS28F128P30T85	1Mb / 102P	Intel StrataFlash Embedded Memory
Numonyx B.V	JS28F128P30T85	1Mb / 99P	Numonyx StrataFlash Embedded Memory
Numonyx B.V	JS28F128P30T85A	1Mb / 97P	Numonyx??StrataFlash짰 Embedded Memory (P30)

More results

Аналогичное описание - JS28F128P30TF75A

производитель	номер детали	датащи	подробное описание детали
Micron Technology	JS28F256P30TFA	1Mb / 95P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	JS28F640P30TF75A	1Mb / 90P	Numonyx짰 Axcell??P30-65nm Flash Memory
	PC28F00BP30EFA	11Mb / 86P	Numonyx짰 Axcell??P30-65nm Flash Memory
	PC28F00AP30TFA	11Mb / 86P	Numonyx짰 Axcell??P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
	JS28F512P30TFA	11Mb / 86P	Numonyx Axcell P30-65nm Flash Memory
	PC28F256P30TFA	1Mb / 95P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	JS28F512P30EFA	1Mb / 92P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
	PC28F256P30BFA	1Mb / 98P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Numonyx B.V	JS28F128P30T85A	1Mb / 97P	Numonyx??StrataFlash짰 Embedded Memory (P30)
Micron Technology	RC28F256P30BFA	1Mb / 98P	Micron Parallel NOR Flash Embedded Memory (P30-65nm)

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