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JS28F128P30TF75A датащи(PDF) 64 Page - Micron Technology

номер детали JS28F128P30TF75A
подробное описание детали  Numonyx Axcell P30-65nm Flash Memory
PDF  90 Pages
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производитель  MICRON [Micron Technology]
домашняя страница  http://www.micron.com
Logo MICRON - Micron Technology

JS28F128P30TF75A датащи(HTML) 64 Page - Micron Technology

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P30-65nm SBC
Datasheet
Apr 2010
64
Order Number: 208033-02
Table 34: System Interface Information
Offset
Length
Description
Add
Hex
Code
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1B:
--17
1.7V
1Ch
1
VCC logic supply maximum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1C:
--20
2.0V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 HEX volts
1D:
--85
8.5V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 HEX volts
1E:
--95
9.5V
1Fh
1
“n” such that typical single word program time-out = 2n
µ-sec
1F:
--06
64
µs
20h
1
“n” such that typical full buffer write time-out = 2n
µ-sec
20:
--09
512
µs
21h
1
“n” such that typical block erase time-out = 2n m-sec
21:
--09
0.5s
22h
1
“n” such that typical full chip erase time-out = 2n m-sec
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times
typical
23:
--02
256
µs
24h
1
“n” such that maximum buffer write time-out = 2n times
typical
24:
--02
2048
µs
25h
1
“n” such that maximum block erase time-out = 2n times
typical
25:
--03
4s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA



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