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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GP датащи(PDF) 80 Page - SPANSION |
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S29GL01GP датащи(HTML) 80 Page - SPANSION |
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80 / 81 page  80 S29GL-P MirrorBit® Flash Family S29GL-P_00_A14 October 22, 2012 Da ta Sh e e t TSOP Pin and BGA Package Capacitance Changed RESET# values. Table S29GL-P Memory Array Command Definitions, x16 Changed number of cycles for Device ID to 6 Changed number of cycles for Write Buffer to 6 Added note regarding the number of cycles in a Write Buffer command Table S29GL-P Memory Array Command Definitions, x8 Changed number of cycles for Device ID to 6 Changed number of cycles for Write Buffer to 6 Added note regarding the number of cycles in a Write Buffer command Table System Interface String Changed value of address 20h (x16) to 0009h and description to “Typical timeout for buffer write 2 n µs” Added values of 128 Mb-512 Mb densities to address 22h (x16) Table Device Geometry Definition For address 31h (x16) corrected x8 address Revision A13 (November 17, 2010) Performance Characteristics Updated access time options for S29GL512P Ordering Information Updated speed options for S29GL512P Read Operation Timing Figure Added note Revision A14 (October 22, 2012) Sector Erase Clarified tSEA Erase Suspend Clarified tSEA Writing Commands/Command Sequences Sub-section RY/BY#: Clarified last sentence Figure Advanced Sector Protection/ Unprotection Corrected Note numbering Table S29GL-P Memory Array Command Definitions, x8 Corrected Address for 3rd Cycle of Write-To-Buffer-Abort Reset command Table System Interface String Changed value of address 20h (x16) to 0006h Advance Information on S29GL-R 65 nm MirrorBit Hardware Reset (RESET#) and Power-up Sequence Updated section title to Advance Information on S29GL-S Eclipse 65 nm MirrorBit Power-On and Warm Reset Timing Updated section to cover GL-S Power-On and Warm Reset Timing Section Description |
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