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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GP датащи(PDF) 67 Page - SPANSION |
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S29GL01GP датащи(HTML) 67 Page - SPANSION |
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67 / 81 page  October 22, 2012 S29GL-P_00_A14 S29GL-P MirrorBit® Flash Family 67 Data She e t 11.7.5 Erase And Programming Performance Notes 1. Typical program and erase times assume the following conditions: 25°C, 3.6 V VCC, 10,000 cycles, checkerboard pattern. 2. Under worst case conditions of -40°C, VCC = 3.0 V, 100,000 cycles. 3. Effective write buffer specification is based upon a 32-word write buffer operation. 4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 12.1–12.4. 11.7.6 TSOP Pin and BGA Package Capacitance Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 100 MHz. Table 11.8 Erase And Programming Performance Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 3.5 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time S29GL128P 64 256 sec S29GL256P 128 512 S29GL512P 256 1024 S29GL01GP 512 2048 Total Write Buffer Time (Note 3) 480 µs Excludes system level overhead (Note 5) Total Accelerated Write Buffer Programming Time (Note 3) 432 µs Chip Program Time S29GL128P 123 sec S29GL256P 246 S29GL512P 492 S29GL01GP 984 Table 11.9 Package Capacitance Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 10 pF COUT Output Capacitance VOUT = 0 10 12 pF CIN2 Control Pin Capacitance VIN = 0 8 10 pF WP#/ACC Separated Control Pin VIN = 0 42 45 pF RESET# Separated Control Pin VIN = 0 25 28 pF CE# Separated Control Pin VIN = 0 22 25 pF |
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