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S29GL01GP датащи(PDF) 65 Page - SPANSION

номер детали S29GL01GP
подробное описание детали  1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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S29GL01GP датащи(HTML) 65 Page - SPANSION

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October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
65
Data
She e t
11.7.4
S29GL-P Alternate CE# Controlled Erase and Program Operations
Notes
1. Not 100% tested.
2. See DC Characteristics on page 56 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with VIO = 1.8 V and VCC = 3.0 V.
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
Parameter
Description
(Notes)
Speed Options
JEDEC
Std.
90
100
110
120
130
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1 Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
Effective Write Buffer Program Operation (Notes 2, 4)Per Word
Typ
15
µs
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec



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