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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GP датащи(PDF) 74 Page - SPANSION |
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S29GL01GP датащи(HTML) 74 Page - SPANSION |
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74 / 81 page  74 S29GL-P MirrorBit® Flash Family S29GL-P_00_A14 October 22, 2012 Da ta Sh e e t Table 12.6 System Interface String Addresses (x16) Addresses (x8) Data Description 1Bh 36h 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV 1Ch 38h 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0006h Typical timeout per single byte/word write 2 N µs 20h 40h 0006h Typical timeout for buffer write 2N µs (00h = not supported) 21h 42h 0009h Typical timeout per individual block erase 2N ms 22h 44h 0013h = 1 Gb 0012h = 512 Mb 0011h = 256 Mb 0010h = 128 Mb Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0003h Max. timeout for byte/word write 2N times typical 24h 48h 0005h Max. timeout for buffer write 2N times typical 25h 4Ah 0003h Max. timeout per individual block erase 2 N times typical 26h 4Ch 0002h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 12.7 Device Geometry Definition Addresses (x16) Addresses (x8) Data Description 27h 4Eh 001Bh 001Ah 0019h 0018h Device Size = 2N byte 1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0006h 0000h Max. number of byte in multi-byte write = 2 N (00h = not supported) 2Ch 58h 0001h Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 00xxh 000xh 0000h 000xh Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 00FFh, 0003h, 0000h, 0002h =1 Gb 00FFh, 0001h, 0000h, 0002h = 512 Mb 00FFh, 0000h, 0000h, 0002h = 256 Mb 007Fh, 0000h, 0000h, 0002h = 128 Mb 31h 32h 33h 34h 62h 64h 66h 68h 0000h 0000h 0000h 0000h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) |
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