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S29GL01GP датащи(PDF) 57 Page - SPANSION

номер детали S29GL01GP
подробное описание детали  1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
PDF  81 Pages
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S29GL01GP датащи(HTML) 57 Page - SPANSION

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October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
57
Data
She e t
11.7
AC Characteristics
11.7.1
S29GL-P Read Operations
Notes
1. CE#, OE# = VIL
2. OE# = VIL
3. Not 100% tested.
4. See Figure 11.3 and Table 11.1 for test specifications.
5. Unless otherwise indicated, AC specifications for 110 ns speed options are tested with VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested
with VIO = 1.8 V and VCC = 3.0 V.
Table 11.3 S29GL-P Read Operations
Parameter
Description
(Notes)
Test Setup
Speed Options
JEDEC
Std.
90
100
110
120
130
Unit
tAVAV
tRC
Read Cycle Time
VIO = VCC = 2.7 V
Min
–
100
110
120
–
ns
VIO = 1.65 V to VCC,
VCC = 3 V
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
tAVQV
tACC
Address to Output Delay (1)
VIO = VCC = 2.7 V
Max
–
100
110
120
–
ns
VIO = 1.65 V to VCC,
VCC = 3 V
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
tELQV
tCE
Chip Enable to Output Delay (2)
VIO = VCC = 2.7 V
Max
–
100
110
120
–
ns
VIO = 1.65 V to VCC,
VCC = 3 V
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
tPACC
Page Access Time
Max
25
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
ns
tEHQZ
tDF
Chip Enable to Output High Z (3)
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z (3)
Max
20
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
tOEH
Output Enable Hold Time
(3)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tCEH
Chip Enable Hold Time
Read
Min
35
ns



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