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LPC4350 датащи(PDF) 113 Page - NXP Semiconductors

номер детали LPC4350
подробное описание детали  32-bit ARM Cortex-M4/M0 MCU; up to 264 kB SRAM; Ethernet two High-speed USBs; advanced configurable peripherals
PDF  145 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC4350 датащи(HTML) 113 Page - NXP Semiconductors

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LPC4350_30_20_10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 2.1 — 23 September 2011
113 of 145
NXP Semiconductors
LPC4350/30/20/10
32-bit ARM Cortex-M4/M0 microcontroller
[1]
Parameters are shown as RDn or WDn in Figure 33 as indicated in the Conditions column.
[2]
Parameters specified for 40 % of VDD(IO) for rising edges and 60 % of VDD(IO) for falling edges.
[3]
Latest of address valid, CS LOW, OE LOW, BLSx LOW (PB = 1).
[4]
After End Of Read (EOR): Earliest of CS HIGH, OE HIGH, BLSx HIGH (PB = 1), address invalid.
[5]
End Of Write (EOW): Earliest of address invalid, CS HIGH, BLSx HIGH (PB = 1).
tBLSLBLSH
BLS LOW to BLS HIGH time WR10; PB = 0
(WAITWR
WAITWEN + 1)
Tcy(clk) + <tbd>
(WAITWR
WAITWEN + 1)
Tcy(clk) + <tbd>
(WAITWR
WAITWEN + 1)
Tcy(clk) + <tbd>
ns
tBLSHEOW
BLS HIGH to end of write
time
WR11; PB = 0 [5] <tbd>
<tbd>
<tbd>
ns
tBLSHDNV
BLS HIGH to data invalid
time
WR12;
PB = 0
<tbd>
<tbd>
<tbd>
ns
Table 17.
Dynamic characteristics: Static external memory interface …continued
CL =30 pF, Tamb = 40 C to 85 C, VDD(REG)(3V3) = <tbd>.
Symbol
Parameter[1]
Conditions[1]
Min
Typ
Max
Unit
Fig 33. External static memory read/write access (PB = 0)
RD1
RD5
RD2
WR2
WR9
WR12
WR10
WR11
RD5
RD5
RD6
WR8
WR1
EOR
EOW
RD7
RD4
EMC_Ax
EMC_CSx
EMC_OE
EMC_BLSx
EMC_WE
EMC_Dx
002aag214



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