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L9803 датащи(PDF) 100 Page - STMicroelectronics |
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L9803 датащи(HTML) 100 Page - STMicroelectronics |
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100 / 126 page ![]() On-Chip Peripherals L9803 100/126 The following table summarizes the driving mode selection made by PWM_EN, IN1 and IN2 bit Bit 4= DIR: Direction bit. This bit is meaningless when PWM_EN=0. When PWM_EN is set the DIR bit controls the “driving direction” of the bridge. In order to implement a precise control of the direction changes, DIR value is latched by the rising edge of the pwm signal driving the bridge. When the signal does not have edges (i.e. pwm = 0% or 100%) the DIR bit can not be latched and the driving direction does not change even changing DIR bit in BCSR. Bit 5= SC: Short Circuit flag (read only) Bit 6= OVT: Overtemperature flag (read only) Bit 7= PIE: Power section interrupt enable. 5.9 EEPROM (EEP) 5.9.1 Introduction The Electrically Erasable Programmable Read Only Memory is used to store data that need a non volatile back-up. The use of the EEPROM requires a basic protocol described in this chapter. Software or hardware reset and halt modes are managed immediately, stopping the action in progress. Wait mode does not affect the programming of the EEPROM. The Read operation of this memory is the same of a Read-Only-Memory or RAM. The erase and programming cycles are controlled by an EEPROM control register. The user can program 1 to 4 bytes at the same programming cycle providing that the high part of the address is the same for the bytes to be written (only address bits A1 and A0 can change). The EEPROM is mono-voltage. A charge pump generates the high voltage internally to enable the erase and programming cycles. The erase and programming cycles are chained automatically. The global programming cycle duration is controlled by an internal circuit. PWM_EN IN1 IN2 Driving Mode 0X X Direct 1 0 0 PWM1 Up Braking 1 0 1 PWM1 Down Braking 1 1 0 PWM1 Symmetrical 11 1 PWM1/PWM2 |
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