 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
PSD813F1 датащи(PDF) 94 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
PSD813F1 датащи(HTML) 94 Page - STMicroelectronics |
|
|
94 / 120 page  PSD813F1-A Preliminary 90 -90 -12 -15 Symbol Parameter Conditions Min Max Min Max Min Max Unit tISCCF TCK Clock Frequency (except for PLD) (Note 1) 18 16 14 MHz tISCCH TCK Clock High Time (Note 1) 26 29 31 ns tISCCL TCK Clock Low Time (Note 1) 26 29 31 ns tISCCF-P TCK Clock Frequency (for PLD only) (Note 2) 2 2 2 MHz tISCCH-P TCK Clock High Time (for PLD only) (Note 2) 240 240 240 ns tISCCL-P TCK Clock Low Time (for PLD only) (Note 2) 240 240 240 ns tISCPSU ISC Port Set Up Time 8 10 10 ns tISCPH ISC Port Hold Up Time 5 5 5 ns tISCPCO ISC Port Clock to Output 23 24 25 ns tISCPZV ISC Port High-Impedance to Valid Output 23 24 25 ns tISCPVZ ISC Port Valid Output to High-Impedance 23 24 25 ns ISC Timing (5 V ± 10%) Microcontroller Interface – PSD813F1 AC/DC Parameters (5V ± 10% Versions) Symbol Parameter Min Typ Max Unit Flash Program 8.5 sec Flash Bulk Erase (Preprogrammed) (Note 1) 3 30 sec Flash Bulk Erase (Not Preprogrammed) 10 sec tWHQV3 Sector Erase (Preprogrammed) 1 30 sec tWHQV2 Sector Erase (Not Preprogrammed) 2.2 sec tWHQV1 Byte Program 14 1200 µs Program/Erase Cycles (Per Sector) 100,000 cycles tWHWLO Sector Erase Time-Out 100 µs tQ7VQV DQ7 Valid to Output (DQ7-0) Valid 30 ns (Data Polling) (Note 2) Flash Program, Write and Erase Times (5 V ± 10%) NOTES: 1. Programmed to all zeros before erase. 2. The Polling Status DQ7 is valid tQ7VQV ns, before the data byte DQ0-7 is valid for reading. Symbol Parameter Min Typ Max Unit tEEHWL Write Protect After Power Up 5 msec tBLC EEPROM Byte Load Cycle Timing (Note 1) 0.2 120 µsec tWCB EEPROM Byte Write Cycle Time 4 10 msec tWCP EEPROM Page Write Cycle Time (Note 2) 6 30 msec Program/Erase Cycles (Per Sector) 10,000 cycles EEPROM Write Times (5 V ± 10%) NOTES: 1. If the maximum time has elapsed between successive writes to an EEPROM page, the transfer of this data to EEPROM cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type. 2. These specifications are for writing a page to EEPROM cells. NOTES: 1. For “non-PLD” programming, erase or in ISC by-pass mode. 2. For program or erase PLD only. |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
