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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT25DF256 датащи(PDF) 37 Page - Renesas Technology Corp |
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AT25DF256 датащи(HTML) 37 Page - Renesas Technology Corp |
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37 / 47 page  DS-AT25DF256-035 Rev.G Page 37 2024-01-08 © 2024 Renesas Electronics AT25DF256 Datasheet 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles. 2. Not 100% tested (value guaranteed by design and characterization). Program and Erase operations characterized at -10 °C to +85 °C. Program and Erase operations at -40 °C to -10 °C require a minimum of 1.7 V. 13.5 Program and Erase Characteristics Symbol Parameter 1.65 V - 3.6 V 2.3 V - 3.6 V Min Typ Max Min Typ Max Units tPP 1 Page Program Time 256 Bytes 1.5 3.5 1.5 3.5 ms tBP Byte Program Time 12 8 µs tPE Page Erase Time 256 Bytes 6 25 6 25 ms tBLKE 1 Block Erase Time 4 kBytes 50 75 50 60 ms 32 kBytes 350 600 300 400 tCHPE 1,2 Chip Erase Time 350 600 300 400 ms tOTPP 1 OTP Security Register Program Time 400 950 400 950 µs tWRSR 2 Write Status Register Time 20 40 20 40 ms |
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