AT25DF256 datasheet(31/47 Pages) RENESAS

номер детали	AT25DF256

подробное описание детали	256-Kbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support

PDF	47 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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DS-AT25DF256-035 Rev.G

Page 31

2024-01-08

AT25DF256 Datasheet

12.5 Ultra-Deep Power-Down

The Ultra-Deep Power-Down mode allows the device to further reduce its energy consumption compared to the

existing standby and Deep Power-Down modes by shutting down additional internal circuitry. When the device is

in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and Resume from Deep

Power-Down commands are ignored. Since all commands are ignored, the mode can be used as an extra

protection mechanism against inadvertent or unintentional program and erase operations. Entering the Ultra-Deep

Power-Down mode is done by simply asserting the CS pin, clocking in the opcode 79h, and then deasserting the

CS pin. Any additional data clocked into the device after the opcode are ignored. When the CS pin is deasserted,

the device enters the Ultra-Deep Power-Down mode within the maximum time of tEUDPD.

The complete opcode must be clocked in before the CS pin is deasserted; otherwise, the device stops the

operation and returns to the standby mode once the CS pin is deasserted. Also, the device defaults to the standby

mode after a power cycle. The Ultra-Deep Power-Down command is ignored if an internally self-timed operation

such as a program or erase cycle is in progress.

Figure 25. Ultra-Deep Power-Down

SCK

MSB

ICC

Opcode

High-impedance

Ultra-Deep Power-Down Mode Current

Active Current

Standby Mode Current

tEUDPD

1111001

AT25DF256 датащи(PDF) 31 Page - Renesas Technology Corp