STM32H533CE datasheet(112/231 Pages) STMICROELECTRONICS

112 / 231 page

Electrical characteristics

STM32H533xx

112/231

DS14539 Rev 1

Table 34. Typical and maximum current consumption in Stop mode

Parameter

Conditions

Typ

LDO

Max(1)

Unit

TJ =

25°C

TJ =

85°C

TJ =

105°C

TJ =

130°C

IDD

(stop)

Supply current

in Stop

Flash memory in

low power mode,

SRAMs ON

SVOS3

0.26

0.79

6.34

11.45

22.31

SVOS4

0.19

0.59

5.05

9.21

18.13

SVOS5

0.15

0.43

3.97

7.42

14.99

Flash memory in

normal mode,

SRAMs ON

SVOS3

0.27

0.81

6.36

11.47

22.35

SVOS4

0.21

0.61

5.07

9.24

18.17

Flash memory in

low power mode,

SRAMs OFF except SRAM2

16 Kbytes ON

SVOS3

0.20

0.65

5.08

9.21

18.05

SVOS4

0.15

0.48

4.05

7.41

14.68

SVOS5

0.10

0.32

2.84

5.32

10.81

Flash memory in

low power mode,

SRAMs OFF except SRAM2

SVOS3

0.21

0.70

5.49

9.93

19.42

SVOS4

0.16

0.52

4.37

7.99

15.79

SVOS5

0.16

0.36

3.20

5.98

12.12

1. Evaluated by characterization - Not tested in production.

Table 35. Typical and maximum current consumption in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(1)

Unit

Backup

RAM

RTC and

LSE(2)

1.8 V 2.4 V

3 V

3.3 V

TJ =

25 °C

TJ =

85 °C

TJ =

105 °C

TJ =

130 °C

IDD(standby)

Supply

current in

standby

mode,

IWDG OFF

OFF

2.6

2.8

3.0

3.2

4.3

8.8

16.5

42.6

μA

OFF

3.8

4.1

4.4

4.6

6.4

16.9

31.5

75.7

OFF

2.9

3.2

3.5

3.7

5.3

10.0

17.8

44.6

4.2

4.5

4.9

5.1

7.4

18.1

32.8

77.7

1. Evaluated by characterization - Not tested in production.

2. LSE is in medium-low drive mode.

Table 36. Typical and maximum current consumption in VBAT mode

Symbol

Parameter

Conditions

Typ(1)

Max(1)

Unit

Backup

RAM

RTC and

LSE(2)

1.62 V 2.4 V

3 V

3.3 V

TJ =

25 °C

TJ =

85 °C

TJ =

105 °C

TJ =

130 °C

IDD(VBAT)

Supply current

in VBAT mode

OFF

0.01

0.02

0.2

2.0

4.9

14.9

μA

OFF

1.1

1.2

1.30

2.7

12.7

23.8

52.2

OFF

0.5

0.6

1.2

3.2

6.2

16.9

1.6

1.8

3.7

13.9

25.1

54.2

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