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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPSB081 датащи(PDF) 77 Page - STMicroelectronics |
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SPSB081 датащи(HTML) 77 Page - STMicroelectronics |
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77 / 137 page  Symbol Parameter Condition Min Typ Max Unit Item Tested by scan Vin L Input low level V1 = 5 V 1.0 1.45 - V B.007 Vin H Input low level V1 = 5 V - 1.8 2.3 V B.008 Vin Hyst Input hysteresis V1 = 5 V 0.2 0.4 - V B.009 I in Pull down current at input Vin = 1 V 5 30 60 µA B.010 Cin(1) Input capacitance at input CSN, CLK, DI and PWM1,2 0 V < V1 < 5.3 V - 10 15 pF B.011 fCLK SPI input frequency at CLK Tested by scan - - 10 MHz B.012 1. Value of input capacity is not measured in production test. Parameter guaranteed by design. Table 57. DI, CLK and CSN timing Symbol Parameter Condition Min Typ Max Unit Item tCLK Clock period V1 = 5 V; tested by scan 100 - - ns B.013 tCLKH Clock high time V1 = 5 V 40 - - ns B.014 tCLKL Clock low time V1 = 5 V 40 - - ns B.015 tset CSN CSN setup time, CSN low before rising edge of CLK V1 = 5 V 150 - - ns B.016 tset CLK CLK setup time, CLK high before rising edge of CSN V1 = 5 V 150 - - ns B.017 tset DI DI setup time V1 = 5 V 25 - - ns B.018 thold DI DI hold time V1 = 5 V 25 - - ns B.019 tr in Rise time of input signal DI, CLK, CSN V1 = 5 V(1) - - 25 ns B.020 tf in Fall time of input signal DI, CLK, CSN V1 = 5 V(1) - - 25 ns B.021 1. Guaranteed by design. Table 58. Output: DO Symbol Parameter Condition Min Typ Max Unit Item VDOL Output low level V1 = 5 V, IDO = -4 mA - - 0.5 V B.022 VDOH Output high level V1 = 5 V, IDO = 4 mA V1-0.5 - - V B.023 IDOLK Tristate leakage current VCSN = V1, 0V < VDO <´V1 -10 - 10 μA B.024 CDO(1) Tristate input capacitance VCSN = V1, 0 V < V1 < 5.3 V - 10 15 pF B.025 1. Guaranteed by design. Table 59. DO timing Symbol Parameter Condition Min Typ Max Unit Item tr DO(1) DO rise time CL = 50 pF, Iload = -1 mA - - 25 ns B.026 tf DO(1) DO fall time CL = 50 pF, Iload = 1 mA - - 25 ns B.027 ten DO tri L(1) DO enable time from tristate to low level CL = 50 pF, Iload = 1 mA Pull-up load to V1 - 50 100 ns B.028 tdis DO L tri(1) DO disable time from low level to 3-state CL = 50 pF, Iload = 4 mA Pull-up load to V1 - 50 100 ns B.029 SPSB081 SPI DS14048 - Rev 3 page 77/137 |
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