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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LSM6DSV80X датащи(PDF) 84 Page - STMicroelectronics |
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LSM6DSV80X датащи(HTML) 84 Page - STMicroelectronics |
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84 / 181 page  9.53 HG_FUNCTIONS_ENABLE (52h) Enable high-g functions register (R/W) Table 144. HG_FUNCTIONS_ENABLE register HG_INTERRUPTS _ENABLE HG_WU_CHANGE _INT_SEL INT2_HG_WU INT1_HG_WU HG_SHOCK_ DUR_3 HG_SHOCK_ DUR_2 HG_SHOCK_ DUR_1 HG_SHOCK_ DUR_0 Table 145. HG_FUNCTIONS_ENABLE register description HG_INTERRUPTS_ENABLE Enables high-g interrupt generator (high-g wake-up and high-g shock). Default value: 0 (0: interrupt disabled; 1: interrupt enabled) HG_WU_CHANGE_INT_SEL Selects the type of wake-up interrupt to be sent to the INT1 pin, INT2 pin, and described by the HG_IA bit (ALL_INT_SRC (1Dh)). Default value: 0 (0: interrupt generated each time one of the three axes is higher than the threshold; 1: interrupt when high-g passes from all axes under the threshold to at least one axis over the threshold, or vice versa.) INT2_HG_WU Routes high-g wake-up event to INT2. Default value: 0 (0: routing high-g wake-up event to INT2 disabled; 1: routing high-g wake-up event to INT2 enabled) INT1_HG_WU Routes high-g wake-up event to INT1. Default value: 0 (0: routing high-g wake-up event to INT1 disabled; 1: routing high-g wake-up event to INT1 enabled) HG_SHOCK_DUR_[3:0] High-g duration to exit from shock state. Allowed values for HG_SHOCK_DUR_[3:0] are in the range of 0 (default) to 14. HG_SHOCK_DUR[s] = (HG_SHOCK_DUR_[3:0] +1)*512/ODR_XL_HG 9.54 HG_WAKE_UP_THS (53h) High-g wake-up threshold register (R) Table 146. HG_WAKE_UP_THS register HG_WK_THS_7 HG_WK_THS_6 HG_WK_THS_5 HG_WK_THS_4 HG_WK_THS_3 HG_WK_THS_2 HG_WK_THS_1 HG_WK_THS_0 Table 147. HG_WAKE_UP_THS register description HG_WK_THS_[7:0] High-g wake-up threshold. The resolution of the threshold is 1 g/LSB. Default value: 00000000 LSM6DSV80X Register description DS14764 - Rev 1 page 84/181 |
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