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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CS4525 датащи(PDF) 20 Page - Cirrus Logic |
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CS4525 датащи(HTML) 20 Page - Cirrus Logic |
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20 / 91 page  20 DS726A1 CS4525 PWM POWER OUTPUT CHARACTERISTICS AGND = DGND = PGND = 0 V; All voltages with respect to ground; VP = 18 V; RL = 8 Ω for full-bridge, RL = 4 Ω for half-bridge and parallel full-bridge; PWM Switch Rate = 384 kHz; 10 Hz to 20 kHz Measurement Bandwidth; Per- formance measurements taken with a full scale 997 Hz sine wave and AES17 filter; Unless otherwise specified. Parameters Symbol Conditions Min Typ Max Units Power Output per Channel Stereo Full-Bridge Half-Bridge Parallel Full-Bridge PO THD+N < 10% THD+N < 1% THD+N < 10% THD+N < 1% THD+N < 10% THD+N < 1% - - - - - - 15 12 7 5.5 30 23.5 - - - - - - W W W W W W Total Harmonic Distortion + Noise Stereo Full-Bridge Half-Bridge Parallel Full-Bridge THD+N PO = 1 W PO = 0 dBFS = 11.3 W PO = 1 W PO = 0 dBFS = 5.0 W PO = 1 W PO = 0 dBFS = 22.6 W - - - - - - 0.1 0.3 0.1 0.3 0.1 0.3 - - - - - - % % % % % % Dynamic Range Stereo Full-Bridge Half-Bridge Parallel Full-Bridge DYR PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted - - - - - - 102 99 102 99 102 99 - - - - - - dB dB dB dB dB dB MOSFET On Resistance RDS(ON) Id = 0.5 A, TJ =50°C - 518 615 m Ω Efficiency h PO = 2 x 11.3 W, RL = 8 Ω -85 - % Minimum Output Pulse Width PWmin No Load - 50 - ns Rise Time of OUTx tr Resistive Load - 20 - ns Fall Time of OUTx tf Resistive Load - 20 - ns PWM Output Over-Current Error Trip Point ICE TA = 25°C, OCREF = 20 kΩ 2.0 - - A Junction Thermal Warning Trip Point TTW - 120 - °C Junction Thermal Error Trip Point TTE - 140 - °C VP Under-Voltage Error Trip Point VUV TA = 25°C4 - - V Ramp-Up Time - Half-Bridge Configuration TRU Capacitor = 1000 µF - 0.8 - s Ramp-Down Time- Half-Bridge Configuration TRD Capacitor = 1000 µF - 50 - s |
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