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S71GS256 датащи(PDF) 100 Page - SPANSION

номер детали S71GS256
подробное описание детали  128N based MCPs
PDF  195 Pages
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S71GS256 датащи(HTML) 100 Page - SPANSION

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S29GLxxxN MirrorBitTM Flash Family
S29GLxxxN_MCP_A1 December 15, 2004
Advan ce
In form ati o n
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with VIO = VCC
= 3 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Parameter
Speed Options
JEDEC
Std.
Description
90
100
110
110
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
TASO
Address Setup Time to OE# low during
toggle bit polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tCEPH CE# High during toggle bit polling
Min
20
ns
tOEPH OE# High during toggle bit polling
Min
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH CE# Pulse Width High
Min
30
ns
tWHWH1 tWHWH1
Write Buffer Program Operation (Notes 2,
3)
Typ
240
µs
Effective Write Buffer
Program Operation (Notes
2, 4)
Per Word
Typ
15
µs
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming
Operation (Note 2)
Word
Typ
54
µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec



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