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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S71GS256 датащи(PDF) 16 Page - SPANSION |
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S71GS256 датащи(HTML) 16 Page - SPANSION |
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16 / 195 page  This document contains information on a product under development at Spansion LLC. The information is intended to help you evaluate this product. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice. Publication Number S29GLxxxN_MCP Revision A Amendment 1 Issue Date December 15, 2004 ADVANCE INFORMATION S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology Data Sheet Distinctive Characteristics Architectural Advantages Single power supply operation — 3 volt read, erase, and program operations Enhanced VersatileI/O™ control — All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC Manufactured on 110 nm MirrorBit process technology Secured Silicon Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer Flexible sector architecture — S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors — S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors — S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors Compatibility with JEDEC standards — Provides pinout and software compatibility for single- power supply flash, and superior inadvertent write protection 100,000 erase cycles per sector typical 20-year data retention typical Performance Characteristics High performance — 90 ns access time (S29GL128N, S29GL256N, S29GL512N) — 8-word/16-byte page read buffer — 25 ns page read times — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates Low power consumption (typical values at 3.0 V, 5 MHz) — 25 mA typical active read current; — 50 mA typical erase/program current — 1 µA typical standby mode current Software & Hardware Features Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices Hardware features — Advanced Sector Protection — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion |
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