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S71GS256 датащи(PDF) 74 Page - SPANSION |
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S71GS256 датащи(HTML) 74 Page - SPANSION |
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74 / 195 page ![]() 74 S29GLxxxN MirrorBitTM Flash Family S29GLxxxN_MCP_A1 December 15, 2004 Advan ce In form ati o n Figure 4. Erase Operation Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, includ- ing the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase operation. However, when the Erase Suspend command is written during the sec- tor erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the device enters the erase-sus- pend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces sta- tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the pro- START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Data = FFh? No Yes Erasure Completed Embedded Erase algorithm in progress Notes: 1. See Table 12 for program command sequence. 2. See the section on DQ3 for information on the sector erase timer. |
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