FS6407 datasheet(18/111 Pages) NXP

18 / 111 page

NXP Semiconductors

FS6407/FS6408

4.3

Dynamic electrical characteristics

Table 5. Dynamic electrical characteristics

TCASE = -40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UV_L to 36 V, unless otherwise specified. All voltages referenced to

ground.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

Digital interface timing

fSPI

SPI Operation Frequency (50% DC)

0.5

–

8.0

MHz

tMISO_TRANS

MISO Transition Speed, 20 - 80%

•VDDIO = 5.0 V, CLOAD = 50 pF

•VDDIO = 5.0 V, CLOAD = 150 pF

5.0

–

tCLH

Minimum Time SCLK = HIGH

–

tCLL

Minimum Time SCLK = LOW

–

tPCLD

Propagation Delay (SCLK to data at 10% of MISO rising edge)

–

tCSDV

NCS = LOW to Data at MISO Active

–

tSCLCH

SCLK Low Before NCS Low (setup time SCLK to NCS change H/L)

–

tHCLCL

SCLK Change L/H after NCS = low

–

tSCLD

SDI Input Setup Time (SCLK change H/L after MOSI data valid)

–

tHCLD

SDI Input Hold Time (MOSI data hold after SCLK change H/L)

–

tSCLCL

SCLK Low Before NCS High

100

–

tHCLCH

SCLK High After NCS High

100

–

tPCHD

NCS L/H to MISO at High-impedance

–

tONNCS

NCS Min. High Time

500

–

tNCS_MIN

NCS Filter Time

–

Figure 5. SPI timing diagram

Figure 6. Register access restriction

tSCLCH

NCS

SCLK

MISO

MOSI

MSB

LSB

MSB

LSB

tHCLCL

tCLH

tCLL

tPCLD

tSCLD

tHCLD

tSCLCL

tONNCS

tPCHD

tCSDV

Not used

tHCLCH

Tri-state

NCS

500 ns min

Any Fail Safe

Any Main register

acces

Any Fail Safe

3.5 µs min

Any Fail-safe

Any main

Any Fail-safe

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