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AT25QL641 датащи(PDF) 14 Page - Renesas Technology Corp

номер детали AT25QL641
подробное описание детали  SPI Serial Flash Memory with Dual I/O, Quad I/O, QPI Support
PDF  80 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25QL641 датащи(HTML) 14 Page - Renesas Technology Corp

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DS-AT25QL641-130 Rev. G
Page 14
Sep 14, 2022
© 2022 Renesas Electronics
AT25QL641 Datasheet
7.
Status Registers
The Read Status Register command can be used to provide status on the availability of the Flash memory array, if
the device is write enabled or disabled, the state of write protection, and the Quad SPI setting. The Write Status
Register command can be used to configure the devices write protection features and Quad SPI setting. Write
access to the Status register is controlled, in some cases, by the WP pin.
7.1
Busy
BUSY is a read-only bit (S0) that is set to a 1 state when the device is executing a Page Program, Erase, Write
Status Register or Write Security Register command. During this time, the device ignores further command except
for the Read Status Register and Erase / Program Suspend command (see tW, tPP, tSE, tBE1, tBE2 and tCE in Table
26, AC Electrical Characteristics). When the Program, Erase, Write Status Register or Write Security Register
command has completed, hardware clears the BUSY bit (to a 0 state), indicating the device is ready for further
commands.
7.2
Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in status register (S1) that is set to a 1 after executing a Write Enable
command. The WEL status bit is cleared to a 0 when device is write disabled. A write disable state occurs upon
power-up or after any of the following commands: Write Disable, Page Program, Erase and Write Status Register.
7.3
Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits (S4, S3, and S2) that provide write
protection control and status. Block protect bits can be set using the Write Status Register Command (see tW in
Table 26, AC Electrical Characteristics). All, none or a portion of the memory array can be protected from Program
and Erase commands (see Table 5 and Table 6). The factory default setting for the Block Protection Bits is 0, none
of the array protected.
7.4
Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) is non-volatile bits (S5) that controls if the Block Protect Bits (BP2, BP1, BP0) protect
from the Top (TB = 0) or the Bottom (TB = 1) of the array, as shown in Table 5 and Table 6. The factory default
setting is TB = 0. The TB bit can be set with the Write Status Register Command depending on the state of the
SRP0, SRP1, and WEL bits.
Table 2. Status Register-1
S7
S6
S5
S4
S3
S2
S1
S0
SRP
SEC
TB
BP2
BP1
BP0
WEL
BUSY
Status
Register
Protect 0
(Non- Volatile)
Sector
Protect (Non-
Volatile)
Top/Bottom
Write Protect
(Non- Volatile)
Block Protect
(Non-
Volatile)
Block Protect
(Non-
Volatile)
Block Protect
(Non-
Volatile)
Write Enable
Latch
Erase or
Write in
Progress
Table 3. Status Register-2
S15
S14
S13
S12
S11
S10
S9
S8
SUS
CMP
(R)
(R)
(R)
(R)
QE
SRP1
Suspend
Status
Complement
Protect
(Non-Volatile)
Reserved
Reserved
Reserved
Reserved
Quad Enable
(Non-Volatile)
Register
Protect 1
(Non-Volatile)



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