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AT25QL641 датащи(PDF) 41 Page - Renesas Technology Corp

номер детали AT25QL641
подробное описание детали  SPI Serial Flash Memory with Dual I/O, Quad I/O, QPI Support
PDF  80 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25QL641 датащи(HTML) 41 Page - Renesas Technology Corp

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DS-AT25QL641-130 Rev. G
Page 41
Sep 14, 2022
© 2022 Renesas Electronics
AT25QL641 Datasheet
8.18 32-kByte Block Erase (52h)
The 32 kB Block Erase command is used for a 32-kByte block erase operation. Prior to the Block Erase
Command, a Write Enable (06h) command must be issued. The command is initiated by driving the CS pin low
and shifting the command code 52h followed b y a 24-bit block address (A23-A0). See Figure 31 and Figure 32
below. The CS pin must go high after the eighth bit of the last byte has been latched in, otherwise the Block Erase
command is not executed. After CS is driven high, the self-timed Block Erase command commences for a time
duration of tBE1 (see Table 26, AC Electrical Characteristics).
While the block erase operation is in progress, the Read Status Register (05h) command may still be used to
read the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when
the cycle is finished and the device is ready to accept other commands again. When the BUSY bit is asserted,
the Write Enable Latch (WEL) bit in the Status Register is cleared to 0.
Figure 31. 32 kB Block Erase Command (SPI Mode)
Figure 32. 32 kB Block Erase Command (QPI Mode)
35
246
7
29
31
30
9
8
23
22
2
1
0
01
Mode 3
Mode 0
Mode 3
Mode 0
High-Impedance
SO
SI
SCK
CS
Command (52h)
24-Bit Address
MSB
SCK
CS
1
02
3
4
5
Mode 3
Command
52h
A23-16
A15-8
A7-0
Mode 0
8
12
11
15
14
10
9
13
16
20
18
19
23
22
17
21
IO
IO
IO
IO
0
4
2
3
7
6
1
5
67
Mode 3
Mode 0
MSB



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