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AT25QL641 датащи(PDF) 40 Page - Renesas Technology Corp

номер детали AT25QL641
подробное описание детали  SPI Serial Flash Memory with Dual I/O, Quad I/O, QPI Support
PDF  80 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25QL641 датащи(HTML) 40 Page - Renesas Technology Corp

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DS-AT25QL641-130 Rev. G
Page 40
Sep 14, 2022
© 2022 Renesas Electronics
AT25QL641 Datasheet
8.17 4-kByte Block Erase (20h)
The Block Erase command is to erase the data of the selected block as being 1. The command is used for 4K-
byte block. Prior to the Block Erase command, the Write Enable (06h) command must be issued. The command
is initiated by driving the CS pin low and shifting the command code 20h followed by a 24-bit block address
(A23-A0) as shown in Figure 29 and Figure 30. The CS pin must go high after the eighth bit of the last byte has
been latched in, otherwise the Block Erase command is not executed. After CS goes high, the self-timed Block
Erase command commences for a time duration of tSE (see Table 26, AC Electrical Characteristics).
While the block erase operation is in progress, the Read Status Register (05h) command may still be accessed
for checking the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0
when the cycle is finished and the device is ready to accept other commands again. When the BUSY bit is
asserted, the Write Enable Latch (WEL) bit in the Status Register is cleared to 0.
Figure 29. Block Erase Command (SPI Mode)
Figure 30. Block Erase Command (QPI Mode)
SCK
CS
SI
1
02
3
4
6
579
829
21
0
30
31
Command
20h
24-Bit Address
Mode 3
Mode 0
Mode 3
Mode 0
MSB
23
22
SCK
CS
1
0
2
345
Mode 3
Command
A23-16
A15-8
A7-0
20h
Mode 0
8
12
11
15
14
10
9
13
16
20
18
19
23
22
17
21
0
4
2
3
7
6
1
5
67
Mode 3
Mode 0
MSB
IO
0
IO
1
IO
2
IO
3



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